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FS3VS-10

Mitsubishi Electric Semiconductor
Part Number FS3VS-10
Manufacturer Mitsubishi Electric Semiconductor
Description Nch POWER MOSFET
Published Mar 23, 2005
Detailed Description MITSUBISHI Nch POWER MOSFET FS3KM-14A HIGH-SPEED SWITCHING USE FS3KM-14A OUTLINE DRAWING 10 ± 0.3 6.5 ± 0.3 3 ± 0.3 ...
Datasheet PDF File FS3VS-10 PDF File

FS3VS-10
FS3VS-10

Overview
MITSUBISHI Nch POWER MOSFET FS3KM-14A HIGH-SPEED SWITCHING USE FS3KM-14A OUTLINE DRAWING 10 ± 0.
3 6.
5 ± 0.
3 3 ± 0.
3 Dimensions in mm 2.
8 ± 0.
2 15 ± 0.
3 φ 3.
2 ± 0.
2 14 ± 0.
5 3.
6 ± 0.
3 1.
1 ± 0.
2 1.
1 ± 0.
2 0.
75 ± 0.
15 0.
75 ± 0.
15 2.
54 ± 0.
25 2.
54 ± 0.
25 4.
5 ± 0.
2 1 2 3 2.
6 ± 0.
2 w ¡VDSS 700V ¡rDS (ON) (MAX) .
.
4.
75Ω ¡ID .
.
3A ¡Viso 2000V q q GATE w DRAIN e SOURCE e TO-220FN APPLICATION SMPS, DC-DC Converter, battery charger, power supply of printer, copier, HDD, FDD, TV, VCR, personal computer etc.
MAXIMUM RATINGS Symbol VDSS VGSS ID IDM PD Tch Tstg Viso — (Tc = 25°C) Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Isolation voltage Weight VGS = 0V VDS = 0V Conditions Ratings 700 ±30 3 9 30 –55 ~ +150 –55 ~ +150 2000 2 Unit V V A A W °C °C Vrms g Feb.
1999 AC for 1minute, Terminal to case Typical value MITSUBISHI Nch POWER MOSFET FS3KM-14A HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS Symbol V (BR) DSS V (BR) GSS IGSS IDSS VGS (th) rDS (ON) VDS (ON) yfs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) Parameter (Tch = 25°C) Test conditions ID = 1mA, VGS = 0V IGS = ±100µA, VDS = 0V VGS = ±25V, VDS = 0V VDS = 700V, VGS = 0V ID = 1mA, VDS = 10V ID = 1.
5A, VGS = 10V ID = 1.
5A, VGS = 10V ID = 1.
5A, VDS = 10V VDS = 25V, VGS = 0V, f = 1MHz Limits Min.
700 ±30 — — 2 — — 1.
4 — — — — — — — — — Typ.
— — — — 3 3.
65 5.
48 2.
4 460 50 9 12 15 52 22 1.
0 — Max.
— — ±10 1 4 4.
75 7.
13 — — — — — — — — 1.
5 4.
17 Unit V V µA mA V Ω V S pF pF pF ns ns ns ns V °C/W Drain-source breakdown voltage Gate-source breakdown voltage Gate-source l...


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