Silicon Epitaxial Planar Transistor - GME
Description
Silicon Epitaxial Planar Transistor
FEATURES
z Capable low voltage operation
APPLICATIONS
Pb
Lead-free
z Designed for low noise amplifier at VHF
UHF and CATV band
Production specification
2SC5554
ORDERING INFORMATION
Type No.
Marking
2SC5554
YH
SOT-23
Package Code SOT-23
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
Value
VCBO
Collector-Base Voltage
15
VCEO
Collector-Emitter Voltage
9
VEBO
Emitter-Base Voltage
1.
5
IC Collector Current -Continuous
20
PC Collector Dissipation
80
Tj,Tstg
Junction and Storage Temperature
-55 to +150
Units V V V mA mW ℃
C143 Rev.
A
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gmicroelec.
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Production specification
Silicon Epitaxial Planar Transistor
2SC5554
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Symbol Test conditions
MIN TYP
Collector-base breakdown voltage
V(BR)CBO IC=10μA,IE=0
15
Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0
9
Emitter-base breakdown voltage
V(BR)EBO IE=10μA,IC=0
1.
5
Collector cut-off current
ICBO
VCB=15V,IE=0
Collector cut-off current
ICEO
VCB=9V,RBE=∞
Emitter cut-off current
IEBO VEB=1.
5V,IC=0
DC current gain
hFE VCE=1V,IC=5mA
50 120
Transition frequency
fT VCE=1V, IC= 5mA
3.
5 7
Collector output capacitance Power gain Noise Figure
Cob VCB=1V, IE=0,f=1MHz
0.
6
PG
VCE=1V, IC= 5mA, f=900MHz
9 12
NF
VCE=1V,IC=5mA, f=900MHz
1.
4
MAX UNIT V V V
10 μA 1 mA 10 μA 250
GHz 0.
9 pF
dB
3 dB
TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
C143 Rev.
A
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gmicroelec.
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Silicon Epitaxial Planar Transistor
Production specification
2SC5554
C143 Rev.
A
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gmicroelec.
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Silicon Epitaxial Planar Transistor
PACKAGE OUTLINE
Plastic surface mounted package
A
E KB
D G
C
J H
SOLDERING FOOTPRINT
0.
95 0.
95
Production specification
2SC5554
SOT-23
SOT-23
Dim Min Max A 2.
70 3.
10 B 1.
10 1.
50 C 1.
0 Typical D 0.
4 Typical E 0.
35 0.
48 G 1.
80 2.
00 H 0.
02 0.
1 J 0.
1 Typical K 2.
20 2.
60 All Dimensions in mm
0.
90 0.
80
2.
00 Unit ...
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