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TPCA8A01-H

Toshiba Semiconductor
Part Number TPCA8A01-H
Manufacturer Toshiba Semiconductor
Description N-Channel MOSFET
Published Jul 16, 2015
Detailed Description TPCA8A01-H TOSHIBA Field Effect Transistor with Built-in Schottky Barrier Diode Silicon N-Channel MOS Type (Ultra-High-S...
Datasheet PDF File TPCA8A01-H PDF File

TPCA8A01-H
TPCA8A01-H

Overview
TPCA8A01-H TOSHIBA Field Effect Transistor with Built-in Schottky Barrier Diode Silicon N-Channel MOS Type (Ultra-High-Speed U-MOS Ⅲ) TPCA8A01-H High Efficiency DC-DC Converter Applications Notebook PC Applications Portable Equipment Applications 0.
5±0.
1 1.
27 0.
4±0.
1 85 Unit: mm 0.
05 M A 6.
0± 0.
3 5.
0±0.
2 • Built-in schottky barrier diode Low forward voltage: VDSF = −0.
6 V (max) • Small footprint due to a small and thin package • High speed switching • Small gate charge: Qsw =11 nC (typ.
) • Low drain-source ON-resistance: RDS (ON) =4.
3 mΩ (typ.
) • High forward transfer admittance: |Yfs| = 70 S (typ.
) • Low leakage current: IDSS = 100 μA (max) (VDS = 30 V) • Enhancement mode: Vth = 1.
1 to...


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