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TPCS8008-H

Part Number	TPCS8008-H
Manufacturer	Toshiba Semiconductor
Description	N-Channel MOSFET
Published	Jul 16, 2015
Detailed Description	TPCS8008-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (MACHⅡπ-MOSⅤ) TPCS8008-H High-Speed Switching App...
Datasheet	TPCS8008-H PDF File

Overview

TPCS8008-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (MACHⅡπ-MOSⅤ) TPCS8008-H High-Speed Switching Applications Switching Regulator Applications DC/DC Converter Applications Unit: mm • Low drain-source ON-resistance: RDS (ON) = 0.
48 Ω (typ.
) • High forward transfer admittance: |Yfs| = 1.
8 S (typ.
) • Low leakage current: IDSS = 100 μA (max) (VDS = 250 V) • Enhancement model: Vth = 2.
0~4.
0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC (Note 1) Pulse (Note 1) Drain power dissipation (t = 10 s) (Note 2a) Drain power dissipation (t = 10 s) ...

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TPCS8008-H N-Channel MOSFET - Toshiba Semiconductor

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