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TPCS8009-H

Toshiba Semiconductor
Part Number TPCS8009-H
Manufacturer Toshiba Semiconductor
Description N-Channel MOSFET
Published Jul 16, 2015
Detailed Description TPCS8009-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (MACHⅡπ-MOSⅤ) TPCS8009-H High-Speed Switching App...
Datasheet PDF File TPCS8009-H PDF File

TPCS8009-H
TPCS8009-H

Overview
TPCS8009-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (MACHⅡπ-MOSⅤ) TPCS8009-H High-Speed Switching Applications Switching Regulator Applications DC/DC Converter Applications Unit: mm • Low drain-source ON-resistance: RDS (ON) = 0.
27 Ω (typ.
) • High forward transfer admittance: |Yfs| = 2.
1 S (typ.
) • Low leakage current: IDSS = 100 µA (max) (VDS = 150 V) • Enhancement model: Vth = 2.
0~4.
0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit 1.
2.
3.
Source 4 Gate 5.
6.
7.
8 Drain Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC (Note 1) Pulse (Note 1) Drain power dissipation (t = 10...


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