EPITAXIAL PLANAR NPN TRANSISTOR - KEC
Description
SEMICONDUCTOR
TECHNICAL DATA
LOW NOISE AUDIO AMPLIFIER APPLICATION.
FEATURES ᴌHigh DC Current Gain : hFE=70ᴕ700.
ᴌExcellent hFE Linearity
: hFE(0.
1mA)/hFE(2mA)=0.
95(Typ.
).
ᴌLow Noise : NF=0.
2dB(Typ.
), 3dB(Max.
).
ᴌComplementary to KTA1267L.
MAXIMUM RATING (Ta=25ᴱ)
CHARACTERISTIC
SYMBOL
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current Collector Power Dissipation Junction Temperature
VCBO VCEO VEBO
IC IE PC Tj
Storage Temperature Range
Tstg
RATING 50 50 5 150 -150 400 150
-55ᴕ150
UNIT V V V mA mA mW ᴱ ᴱ
J K
D
KTC3199L
EPITAXIAL PLANAR NPN TRANSISTOR
B
F A
HM
C
EE
1 2 3N L
1.
EMITTER 2.
COLLECTOR 3.
BASE
G
O DIM MILLIMETERS A 3.
20 MAX B 4.
30 MAX C 0.
55 MAX D 2.
40+_ 0.
15 E 1.
27
F 2.
30 G 14.
00+_ 0.
50 H 0.
60 MAX J 1.
05 K 1.
45
L 25 M 0.
80 N 0.
55 MAX
O 0.
75
TO-92M
ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Transition Frequency Collector Output Capacitance
ICBO IEBO hFE (Note) VCE(sat) fT Cob
VCB=50V, IE=0 VEB=5V, IC=0 VCE=6V, IC=2mA IC=100mA, IB=10mA VCE=10V, IC=1mA VCB=10V, IE=0, f=1MHz
Noise Figure Note : hFE Classification O:70ᴕ140,
NF(1)
VCE=6V, IC=0.
1mA, f=100Hz, Rg=10kή
NF(2)
VCE=6V, IC=0.
1mA, f=1kHz, Rg=10kή
Y:120ᴕ240, GR:200ᴕ400, BL:300~700
MIN.
70 80 -
TYP.
0.
1 2.
0 0.
5 0.
2
MAX.
0.
1 0.
1 700 0.
25 3.
5 6.
0 3.
0
UNIT ỌA ỌA
V MHz pF
dB
1997.
6.
24
Revision No : 1
1/1
...
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