Silicon NPN Transistor - Hitachi
Description
2SD1136
Silicon NPN Triple Diffused
Application
Power switching TV horizontal deflection output
Outline
TO-220AB
1 23
1.
Base 2.
Collector
(Flange) 3.
Emitter
2SD1136
Absolute Maximum Ratings (Ta = 25°C)
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector surge current Collector power dissipation
Junction temperature Storage temperature Note: 1.
Value at TC = 25°C.
Symbol VCBO VCEO VEBO IC IC(peak) IC(surge) PC PC*1 Tj Tstg
Ratings 200 80 5 4 5 15 1.
8 30 150 –45 to +150
Unit V V V A A A W W °C °C
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Collector to base breakdown V(BR)CBO voltage
200
Collector to emitter breakdown V(BR)CEO voltage
80
Emitter to base breakdown voltage
V(BR)EBO
5
Collector cutoff current
DC current transfer ratio
Collector to emitter saturation voltage
ICES hFE VCE(sat)
— 20 —
Base to emitter saturation voltage
VBE(sat)
—
Fall time Note: 1.
Pulse test.
tf —
Typ —
—
—
— — —
—
—
Max —
—
—
1.
0 — 1.
5
1.
5
1.
0
Unit V
Test conditions IC = 1 mA, IE = 0
V IC = 10 mA, RBE = ∞
V IE = 1 mA, IC = 0
mA VCE = 150 V, RBE = 0 VCE = 5 V, IC = 4 A*1
V IC = 4 A, IB = 0.
4 A*1
V IC = 4 A, IB = 0.
4 A*1
µs IC = 3.
5 A, IB1 = 0.
45 A, LB = 0
2
DC current transfer ratio hFE
Collector current IC (A)
Collector power dissipation Pc (W)
Collector current IC (A)
Maximum Collector Dissipation Curve 40
30
20
10
0 50 100 150 200 Case temperature TC (°C) Area of Safe Operation
10 f = 15.
75 kHz TC = 25°C
(80 V, 15 A)
For picture 10 tube arcing
0.
1 mA 0 100 200
Collector to emitter voltage VCE (V)
Typical Output Characteristics
5 TC = 25°C
4
0.
14 A 0.
12 A 0.
1
P
C
A
=
30
W
0.
08 A
3 0.
06 A
0.
04 A 2
0.
02 A
1
IB = 0
0 2 4 6 8 10 Collector to emitter voltage VCE (V)
1,000 500
DC Current Transfer Ratio vs.
Collector Current
VCE = 5 V
200 TC = 75°C 25
100 –25
50
20
10 0.
005 0.
01 0.
02 0.
05 0.
1 0.
2 0.
5 1.
0 2
Collector current IC (A)
5
2SD1136
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