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B1253

Panasonic Semiconductor
Part Number B1253
Manufacturer Panasonic Semiconductor
Description 2SB1253
Published Jul 6, 2015
Detailed Description Power Transistors 2SB1253 Silicon PNP epitaxial planar type Darlington For power amplification Complementary to 2SD1893...
Datasheet PDF File B1253 PDF File

B1253
B1253

Overview
Power Transistors 2SB1253 Silicon PNP epitaxial planar type Darlington For power amplification Complementary to 2SD1893 Unit: mm 12.
5 3.
5 15.
0±0.
2 0.
7 s Features q Optimum for 40W HiFi output q High foward current transfer ratio hFE: 5000 to 30000 q Low collector to emitter saturation voltage VCE(sat): < –2.
5V q Full-pack package which can be installed to the heat sink with one screw 21.
0±0.
5 15.
0±0.
3 11.
0±0.
2 φ3.
2±0.
1 5.
0±0.
2 3.
2 2.
0±0.
2 2.
0±0.
1 Solder Dip 16.
2±0.
5 s Absolute Maximum Ratings (TC=25˚C) Parameter Symbol Ratings Unit 1.
1±0.
1 5.
45±0.
3 10.
9±0.
5 0.
6±0.
2 Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Col...


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