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KHB4D0N80P1

Part Number	KHB4D0N80P1
Manufacturer	KEC
Description	N CHANNEL MOS FIELD EFFECT TRANSISTOR
Published	Jul 5, 2015
Detailed Description	SEMICONDUCTOR TECHNICAL DATA General Description This planar stripe MOSFET has better characteristics, such as fast swit...
Datasheet	KHB4D0N80P1 PDF File

Overview

SEMICONDUCTOR TECHNICAL DATA General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics.
It is mainly suitable for electronic ballast and switch mode power supplies.
FEATURES VDSS=800V, ID=4A Drain-Source ON Resistance : RDS(ON)=3.
6 @VGS = 10V Qg(typ.
)=25nC KHB4D0N80P1/F1/F2 N CHANNEL MOS FIELD EFFECT TRANSISTOR KHB4D0N80P1 A E I K M D NN F G B Q L J O C P H 123 1.
GATE 2.
DRAIN 3.
SOURCE DIM A B C D E F G H I J K L M N O P Q MILLIMETERS 9.
9 +_ 0.
2 15.
95 MAX 1.
3+0.
1/-0.
05 0.
8 +_ 0.
1 3.
6 +_ 0.
2 2.
8 +_ 0.
1 3.
7 0.
5+0.
1/-0.
05 1.
5 13.
08 +_ 0.
3 1.
46 1.
4 +_ 0.
1 1.
27 +_ 0.
1...

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