DatasheetsPDF.com

KHB4D5N60P

Part Number	KHB4D5N60P
Manufacturer	KEC
Description	N CHANNEL MOS FIELD EFFECT TRANSISTOR
Published	Jul 5, 2015
Detailed Description	SEMICONDUCTOR TECHNICAL DATA KHB4D5N60P/F N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe...
Datasheet	KHB4D5N60P PDF File

Overview

SEMICONDUCTOR TECHNICAL DATA KHB4D5N60P/F N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics.
It is mainly suitable for switching mode power supplies.
FEATURES VDSS(Min.
)= 600V, ID= 4.
5A Drain-Source ON Resistance : RDS(ON)=2.
5 @VGS =10V Qg(typ.
) =17nC MAXIMUM RATING (Tc=25 ) CHARACTERISTIC RATING SYMBOL UNIT KHB4D5N60P KHB4D5N60F Drain-Source Voltage Gate-Source Voltage @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (No...

Similar Datasheet

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)