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BL3401

Part Number	BL3401
Manufacturer	GME
Description	P-Channel High Density Trench MOSDET
Published	Jul 2, 2015
Detailed Description	P-Channel High Density Trench MOSDET FEATURES z Super high dense cell trench design for low RDS(ON). z Rugged and Relia...
Datasheet	BL3401 PDF File

Overview

P-Channel High Density Trench MOSDET FEATURES z Super high dense cell trench design for low RDS(ON).
z Rugged and Reliable.
Pb Lead-free APPLICATIONS z P-channel enhancement mode effect transistor.
z Switching application.
Production specification BL3401 ORDERING INFORMATION Type No.
Marking BL3401 A19TF SOT-23 Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter VDSS Drain-Source voltage VGSS ID IDM IS Gate -Source voltage Drain Current-Continuous a -Pulseb @ TA = 25 ℃ Drain-Source Diode Forward Current a PD Power Dissipation RθJA Thermal resistance,Junction-to-Ambient TJ, Tstg Junction and Storage Temperature Value -25 ±12 -4.
2 -1...

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