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IPU09N03LAG

Infineon
Part Number IPU09N03LAG
Manufacturer Infineon
Description Power Transistor
Published Jun 26, 2015
Detailed Description OptiMOS®2 Power-Transistor Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1) for tar...
Datasheet PDF File IPU09N03LAG PDF File

IPU09N03LAG
IPU09N03LAG


Overview
OptiMOS®2 Power-Transistor Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1) for target application • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM) • Superior thermal resistance • 175 °C operating temperature • Pb-free lead plating; RoHS compliant IPD09N03LA G IPF09N03LA G IPS09N03LA G IPU09N03LA G Product Summary V DS R DS(on),max (SMD version) ID 25 V 8.
6 mΩ 50 A Type IPD09N03LA IPF09N03LA IPS09N03LA IPU09N03LA Package Marking P-TO252-3-11 09N03LA P-TO252-3-23 09N03LA P-TO251-3-11 09N03LA P-TO251-3-1 09N03LA Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current Pulsed drain current Avalanche energy, single pulse ID I D,pulse E AS T C=25 °C2) T C=100 °C T C=25 °C3) I D=45 A, R GS=25 Ω Reverse diode dv /dt dv /dt I D=50 A, V DS=20 V, di /dt =200 A/µs, T j,max=175 °C Gate source voltage4) V GS Power dissipation P tot T C=25 °C Operating and storage temperature T j, T stg IEC climatic category; DIN IEC 68-1 Value 50 45 350 75 6 ±20 63 -55 .
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175 55/175/56 Unit A mJ kV/µs V W °C Rev.
2.
0 Downloaded from Elcodis.
com electronic components distributor page 1 2006-05-11 IPD09N03LA G IPF09N03LA G IPS09N03LA G IPU09N03LA G Parameter Symbol Conditions min.
Values typ.
Unit max.
Thermal characteristics Thermal resistance, junction - case SMD version, device on PCB R thJC R thJA minimal footprint 6 cm2 cooling area5) - - 2.
4 K/W - 75 - 50 Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Gate resistance Transconductance V (BR)DSS V GS=0 V, I D=1 mA V GS(th) V DS=V GS, I D=20 µA I DSS V DS=25 V, V GS=0 V, T j=25 °C V DS=25 V, V GS=0 V, T j=125 °C I GSS V GS=20 V, V DS=0 V R DS(on) V GS=4.
5 V, I D=30 A V GS=4.
5 V, I D=30 A...


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