DatasheetsPDF.com

K1340

Hitachi Semiconductor
Part Number K1340
Manufacturer Hitachi Semiconductor
Description 2SK1340
Published Jun 15, 2015
Detailed Description 2SK1340 Silicon N-Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switc...
Datasheet PDF File K1340 PDF File

K1340
K1340

Overview
2SK1340 Silicon N-Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Outline TO-3P D G1 2 3 1.
Gate 2.
Drain (Flange) S 3.
Source 2SK1340 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1.
PW ≤ 10 µs, duty cycle ≤ 1% 2.
Value at TC = 25°C Symbol VDSS VGSS ID I *1 D(pulse) I DR Pch*2 Tch Tstg Ratings 900 ±30 5 12 5 100 150 –55 to +150 Unit V V A A A W °C °C 2 2SK1340 Electrical Characteristics (Ta = 25°C) Item Symbol Min Drain to source breakdown voltage V(BR)DSS 900 Gate to source breakdown voltage V(BR)GSS ±30 Gate to source leak current I GSS Zero gate voltage drain current IDSS Gate to source cutoff voltage VGS(off) Static drain to source on state RDS(on) resistance — — 2.
0 — Forward transfer admittance |yfs| 2.
0 Input capacitance Ciss — Output capacitance Coss — Reverse transfer capacitance Crss — Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage t d(on) tr t d(off) tf VDF — — — — — Body to drain diode reverse recovery time t rr — Note: 1.
Pulse test Typ — — — — — 3.
0 3.
2 740 305 150 15 70 90 90 0.
9 900 Max — — ±10 250 3.
0 4.
0 — — — — — — — — — — Unit V V µA µA V Ω S pF pF pF ns ns ns ns V ns Test conditions ID = 10 mA, VGS = 0 IG = ±100 µA, VDS = 0 VGS = ±25 V, VDS = 0 VDS = 720 V, VGS = 0 ID = 1 mA, VDS = 10 V ID = 3 A, VGS = 10 V *1 ID = 3 A, VDS = 20 V *1 VDS = 10 V, VGS = 0, f = 1 MHz ID = 3 A, VGS = 10 V, RL = 10 Ω IF = 5 A, VGS = 0 IF = 5 A, VGS = 0, diF/dt = 100 A/µs 3 Channel Dissipation Pch (W) 2SK1340 Power vs.
Temperature Derating 150 100 50 Drain Current ID (A) 0 50 100 150 Case Temperature TC (°C) Typical Output Characteristics...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)