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D2525

Part Number	D2525
Manufacturer	Toshiba
Description	Silicon NPN Triple Diffused Type Transistor
Published	Jun 12, 2015
Detailed Description	TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2525 2SD2525 Audio Frequency Power Amplifier Applications Unit...
Datasheet	D2525 PDF File

Overview

TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2525 2SD2525 Audio Frequency Power Amplifier Applications Unit: mm • High DC current gain: 100 (min) • Low saturation voltage: VCE (sat) = 0.
4 V (typ.
) (IC = 2 A, IB = 0.
2 A) • Complementary to 2SB1640 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 60 V Collector-emitter voltage VCEO 60 V Emitter-base voltage VEBO 7 V Collector current DC IC 3 A Pulse ICP 6 Base current IB 0.
5 A Collector power dissipation Junction temperature Storage temperature range PC 1.
8 W Tj 150 °C Tstg −55 to 150 °C JEDEC JEITA ― ― Note: Using continuously under heavy loads (e.
g.
t...

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