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C2880

Part Number	C2880
Manufacturer	Toshiba
Description	2SC2880
Published	Jun 12, 2015
Detailed Description	TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process) 2SC2880 2SC2880 High Voltage Switching Applications ...
Datasheet	C2880 PDF File

Overview

TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process) 2SC2880 2SC2880 High Voltage Switching Applications Unit: mm • High voltage: VCEO = 150 V • High transition frequency: fT = 120 MHz • Small flat package • PC = 1.
0 to 2.
0 W (mounted on a ceramic substrate) • Complementary to 2SA1200 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range VCBO VCEO VEBO IC IB PC PC (Note 1) Tj Tstg 200 150 5 50 10 500 800 150 −55 to 150 V V V mA mA mW °C °C PW-Mini JEDEC ― JEITA SC-62 TOS...

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