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C2982

Toshiba
Part Number C2982
Manufacturer Toshiba
Description 2SC2982
Published Jun 12, 2015
Detailed Description TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2982 Storobo Flash Applications Medium Power Amplifier Ap...
Datasheet PDF File C2982 PDF File

C2982
C2982

Overview
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2982 Storobo Flash Applications Medium Power Amplifier Applications 2SC2982 Unit: mm • High DC current gain and excellent linearity : hFE (1) = 140 to 600 (VCE = 1 V, IC = 0.
5 A) : hFE (2) = 70 (min), 140 (typ.
), (VCE = 1 V, IC = 2 A) • Low saturation voltage : VCE (sat) = 0.
5 V (max) (IC = 2 A, IB = 50 mA) • Small flat package • PC = 1.
0 to 2.
0 W (mounted on a ceramic substrate) • Complementary to 2SA1314 Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current DC Pulse (Note 1) Base current DC Pulse (Note 1) Collector po...


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