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2SC2290

Part Number	2SC2290
Manufacturer	HGSemi
Description	Silicon NPN POWER TRANSISTOR
Published	Jun 12, 2015
Detailed Description	HG Semiconductors HG RF POWER TRANSISTOR 2SC2290 ROHS Compliance,Silicon NPN POWER TRANSISTOR Specified 12.5V, 28MHz C...
Datasheet	2SC2290 PDF File

Overview

HG Semiconductors HG RF POWER TRANSISTOR 2SC2290 ROHS Compliance,Silicon NPN POWER TRANSISTOR Specified 12.
5V, 28MHz Characteristics Output Power : Po = 60W PEP (Min.
) Power Gain : Gp = 11.
8dB (Min.
) Collector Efficiency ηC: = 35% (Min.
) Intermodulation Distortion : IMD = 30dB (Max.
) MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage C ollector C urrent Collector Power Dissipation Junction T em perature Storage Temperature Range SYMBOL RATING UNIT V CBO V CES VCEO V EBO IC CP Tj T stg 45 45 18 4 20 175 175 65~175 V V V V A W °C °C ELECTRICAL CHARACTERISTICS (Tc = 25°C) JEDEC EIAJ TOSHIB...

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