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2SC2510

Part Number	2SC2510
Manufacturer	HGSemi
Description	Silicon NPN POWER TRANSISTOR
Published	Jun 12, 2015
Detailed Description	HG Semiconductors 2SC2510HG RF POWER TRANSISTOR ROHS Compliance,Silicon NPN POWER TRANSISTOR Specified 28V, 28MHz Char...
Datasheet	2SC2510 PDF File

Overview

HG Semiconductors 2SC2510HG RF POWER TRANSISTOR ROHS Compliance,Silicon NPN POWER TRANSISTOR Specified 28V, 28MHz Characteristics Output Power : Po = 150W PEP (Min.
) Power Gain : Gp = 12.
2dB (Min.
) Collector Efficiency ηC: = 35% (Min.
) Intermodulation Distortion : IMD = 30dB (Max.
) MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage C ollector C urrent Collector Power Dissipation Junction T em perature Storage Temperature Range SYMBOL V CBO VCES VCEO V EBO IC PC Tj T stg RATING 60 60 35 4 20 250 175 65~175 ELECTRICAL CHARACTERISTICS (Tc = 25°C) UNIT V V V V A W °C °C JEDEC EIAJ TOSHIBA Weig...

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