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C5356

Toshiba
Part Number C5356
Manufacturer Toshiba
Description 2SC5356
Published Jun 11, 2015
Detailed Description TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process) 2SC5356 2SC5356 High Voltage Switching Applications ...
Datasheet PDF File C5356 PDF File

C5356
C5356


Overview
TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process) 2SC5356 2SC5356 High Voltage Switching Applications Switching Regulator Applications DC-DC Converter Applications Unit: mm • Excellent switching times: tf = 0.
5 μs (max) (IC = 1.
2 A) • High collectors breakdown voltage: VCEO = 800 V • High DC current gain: hFE = 15 (min) (IC = 0.
15 A) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current DC Pulse Base current Collector power dissipation Ta = 25°C Tc = 25°C Junction temperature Storage temperature range VCBO VCEO VEBO IC ICP IB PC Tj Tstg 900 800 7 3 5 1 1.
5 25 150 −55 to 150 V V V A A W °C °C Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
JEDEC ― JEITA ― TOSHIBA 2-7B5A Weight: 0.
36 g (typ.
) JEDEC ― JEITA ― TOSHIBA 2-7B7A Weight: 0.
36 g (typ.
) 1 2006-11-10 Electrical Characteristics (Ta = 25°C) 2SC5356 Characteristics Collector cut-off current Emitter cut-off current Collector-base breakdown voltage Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Symbol Test Condition ICBO IEBO V (BR) CBO V (BR) CEO hFE (1) hFE (2) VCE (sat) VBE (sat) VCB = 720 V, IE = 0 VEB = 7 V, IC = 0 IC = 1 mA, IE = 0 IC = 10 mA, IB = 0 VCE = 5 V, IC = 1 mA VCE = 5 V, IC = 0.
15 A IC = 1.
2 A, IB = 0.
24 A IC = 1.
2 A, IB = 0...


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