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C5089

Part Number	C5089
Manufacturer	Toshiba
Description	2SC5089
Published	Jun 11, 2015
Detailed Description	TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5089 2SC5089 VHF~UHF Band Low Noise Amplifier Applications • L...
Datasheet	C5089 PDF File

Overview

TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5089 2SC5089 VHF~UHF Band Low Noise Amplifier Applications • Low noise figure, high gain.
• NF = 1.
1dB, |S21e|2 = 13dB (f = 1 GHz) Absolute Maximum Ratings (Ta = 25°C) Unit: mm Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 10 V Emitter-base voltage VEBO 1.
5 V Base current IB 20 mA Collector current IC 40 mA Collector power dissipation PC 150 mW Junction temperature Tj 125 °C Storage temperature range Tstg −55 to 125 °C Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature...

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