2SC5201 - Toshiba
Description
TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type
2SC5201
High-Voltage Switching Applications
2SC5201
Unit: mm
• High breakdown voltage: VCEO = 600 V • Low saturation voltage: VCE (sat) = 1.
0 V (max) (IC = 20 mA, IB = 0.
5 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC Pulse
Base current
Collector power dissipation
Junction temperature
Storage temperature range
VCBO VCEO VEBO
IC ICP IB PC Tj Tstg
600 600
7 50 100 25 900 150 −55 to 150
V V V
mA
mA mW °C °C
JEDEC JEITA
TO-92MOD ―
Note1: Using continuously under heavy loads (e.
g.
the application of high
TOSHIBA
2-5J1A
temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the
Weight: 0.
36 g (typ.
)
reliability significantly even if the operating conditions (i.
e.
operating
temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.
e.
reliability test report
and estimated failure rate, etc).
1
http://store.
iiic.
cc/
2009-12-21
Electrical Characteristics (Ta = 25°C)
Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage Base-emitter voltage Collector output capacitance
Symbol
ICBO IEBO VCEO hFE (1) hFE (2) VCE (sat) VBE Cob
Test Condition
VCB = 600 V, IE = 0 VEB = 7 V, IC = 0 IC = 1 mA, IB = 0 VCE = 5 V, IC = 1 mA VCE = 5 V, IC = 20 mA IC = 20 mA, IB = 0.
5 mA VCE = 5 V, IC = 20 mA VCB = 10 V, IE = 0, f = 1 MHz
Marking
2SC5201
Min Typ.
Max Unit
――
1
――
1
600 ―
―
80 ― ―
100 ― 300
― ― 1.
0
― 0.
66 0.
85
― 6.
5 ―
μA μA V
V V pF
C5201
Part No.
(or abbreviation code) Lot No.
Note2.
Note2: A li...
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