DatasheetsPDF.com

C5359

Toshiba
Part Number C5359
Manufacturer Toshiba
Description 2SC5359
Published Jun 11, 2015
Detailed Description TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5359 Power Amplifier Applications 2SC5359 Unit: mm • High break...
Datasheet PDF File C5359 PDF File

C5359
C5359


Overview
TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5359 Power Amplifier Applications 2SC5359 Unit: mm • High breakdown voltage: VCEO = 230 V • Complementary to 2SA1987 • Suitable for use in 100-W high fidelity audio amplifier’s output stage.
Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 230 V Collector-emitter voltage VCEO 230 V Emitter-base voltage VEBO 5 V Collector current IC 15 A Base current IB 1.
5 A Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range PC 180 W Tj 150 °C T stg −55 to 150 °C JEDEC JEITA TOSHIBA ― ― 2-21F1A Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in Weight: 9.
75 g (typ.
) temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
1 2012-08-31 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance I CBO I EBO V (BR) CEO VCB = 230 V, IE = 0 VEB = 5 V, IC = 0 IC = 50 mA, IB = 0 hFE (1) VCE = 5 V, IC = 1 A (Note 1) hFE (2) VCE (sat) VCE = 5 V, IC = 7 A IC = 8 A, IB = 0.
8 A VBE VCE = 5 V, IC = 7 A fT VCE = 5 V, IC = 1 A Cob VCB = 10 V, IE = 0, f = 1 MHz Note 1:hFE (1) classification R: 55 to 110, O: 80 to 160 Marking 2SC5359 Min Typ.
Max Unit ― ― 5.
0 μA ― ― 5.
0 μA 230 ― ― V 55 ― 160 35 87 ― ...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)