2SC3429 - Toshiba
Description
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
2SC3429
2SC3429
VHF~UHF Band Low Noise Amplifier Applications
Unit: mm
· Low noise figure · NF = 1.
5dB, |S21e|2 = 16dB (f = 500 MHz) · NF = 1.
7dB, |S21e|2 = 10.
5dB (f = 1 GHz)
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range
Symbol
VCBO VCEO VEBO
IC IB PC Tj Tstg
Rating
17 12 3 70 30 150 125 -55~125
Unit
V V V mA mA mW °C °C
Microwave Characteristics (Ta = 25°C)
JEDEC
―
JEITA
SC-59
TOSHIBA
2-3F1A
Weight: 0.
012 g (typ.
)
Characteristics Transition frequency Insertion gain
Noise figure
Symbol
Test Condition
fT ïS21eï2 (1) ïS21eï2 (2)
NF (1)
NF (2)
VCE = 10 V, IC = 20 mA VCE = 10 V, IC = 20 mA, f = 500 MHz VCE = 10 V, IC = 20 mA, f = 1 GHz VCE = 10 V, IC = 5 mA, f = 500 MHz VCE = 10 V, IC = 5 mA, f = 1 GHz
Min Typ.
Max Unit
¾ 5 ¾ GHz
¾ 16 ¾ ¾ 10.
5 ¾
dB
¾ 1.
5 ¾ dB
¾ 1.
7 ¾
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min Typ.
Max Unit
Collector cut-off current Emitter cut-off current DC current gain Collector output capacitance Reverse transfer capacitance
ICBO IEBO hFE Cob Cre
VCB = 10 V, IE = 0 VEB = 1 V, IC = 0 VCE = 10 V, IC = 20 mA
VCB = 10 V, IE = 0, f = 1 MHz (Note)
¾ ¾ 25 ¾ ¾
¾ ¾ ¾ 0.
85 0.
57
1 1 ¾ ¾ ¾
mA mA
pF pF
Note: Cre is measured by 3 terminal method with capacitance bridge.
1 2003-03-19
Marking
2SC3429
2 2003-03-19
2SC3429
3 2003-03-19
2SC3429
4 2003-03-19
2SC3429
RESTRICTIONS ON PRODUCT USE
000707EAA
· TOSHIBA is continually working to improve the quality and reliability of its products.
Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress.
It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making...
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