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C3122

Toshiba
Part Number C3122
Manufacturer Toshiba
Description 2SC3122
Published Jun 8, 2015
Detailed Description TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC3122 2SC3122 TV VHF RF Amplifier Applications Unit: mm · Hig...
Datasheet PDF File C3122 PDF File

C3122
C3122

Overview
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC3122 2SC3122 TV VHF RF Amplifier Applications Unit: mm · High gain: Gpe = 24dB (typ.
) (f = 200 MHz) · Low noise: NF = 2.
0dB (typ.
) (f = 200 MHz) · Excellent forward AGC characteristics Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 30 30 3 20 10 150 125 -55~125 Unit V V V mA mA mW °C °C Electrical Characteristics (Ta = 25°C) JEDEC ― JEITA SC-59 TOSHIBA 2-3F1A Weight: 0.
012 g (typ.
) Characteristics Symbo...


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