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HFS10N60S

Part Number	HFS10N60S
Manufacturer	SemiHow
Description	N-Channel MOSFET
Published	Jun 7, 2015
Detailed Description	HFS10N60S Nov 2007 HFS10N60S 600V N-Channel MOSFET BVDSS = 600 V RDS(on) typ = 0.67 ȍ ID = 9.5 A FEATURES Originat...
Datasheet	HFS10N60S PDF File

Overview

HFS10N60S Nov 2007 HFS10N60S 600V N-Channel MOSFET BVDSS = 600 V RDS(on) typ = 0.
67 ȍ ID = 9.
5 A FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 29 nC (Typ.
) Extended Safe Operating Area Lower RDS(ON) : 0.
67 ȍ (Typ.
) @VGS=10V 100% Avalanche Tested TO-220F 123 1.
Gate 2.
Drain 3.
Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25ఁ͚ – Continuous (TC = 100ఁ͚ – Pulsed ...

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