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HFW5N60S

SemiHow
Part Number HFW5N60S
Manufacturer SemiHow
Description N-Channel MOSFET
Published Jun 7, 2015
Detailed Description HFW5N60S_HFI5N60S Sep 2009 HFW5N60S / HFI5N60S 600V N-Channel MOSFET BVDSS = 600 V RDS(on) typ = 2.0 Ω ID = 4.5 A FE...
Datasheet PDF File HFW5N60S PDF File

HFW5N60S
HFW5N60S

Overview
HFW5N60S_HFI5N60S Sep 2009 HFW5N60S / HFI5N60S 600V N-Channel MOSFET BVDSS = 600 V RDS(on) typ = 2.
0 Ω ID = 4.
5 A FEATURES  Originative New Design  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology  Very Low Intrinsic Capacitances  Excellent Switching Characteristics  Unrivalled Gate Charge : 10.
5 nC (Typ.
)  Extended Safe Operating Area  Lower RDS(ON) : 2.
0 Ω (Typ.
) @VGS=10V  100% Avalanche Tested D2-PAK I2-PAK HFW5N60S HFI5N60S 1.
Gate 2.
Drain 3.
Source Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25℃)...


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