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HFC1N60

Part Number	HFC1N60
Manufacturer	SemiHow
Description	N-Channel MOSFET
Published	Jun 7, 2015
Detailed Description	HFC1N60 Sep 2006 HFC1N60 600V N-Channel MOSFET BVDSS = 600 V RDS(on) typ ȍ ID = 0.5 A FEATURES Originative N...
Datasheet	HFC1N60 PDF File

Overview

HFC1N60 Sep 2006 HFC1N60 600V N-Channel MOSFET BVDSS = 600 V RDS(on) typ ȍ ID = 0.
5 A FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 4.
0 nC (Typ.
) Extended Safe Operating Area Lower RDS(ON) ȍ7\S#9GS=10V 100% Avalanche Tested TO-126 1 23 1.
Gate 2.
Drain 3.
Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25ఁ͚͑ – Continuous (TC = 100ఁ͚͑ – Pulsed (N...

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