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HFU2N60S

SemiHow
Part Number HFU2N60S
Manufacturer SemiHow
Description 600V N-Channel MOSFET
Published Jun 7, 2015
Detailed Description HFD2N60S_HFU2N60S March 2014 HFD2N60S / HFU2N60S 600V N-Channel MOSFET BVDSS = 600 V RDS(on) typ ȍ ID = 1.9 A ...
Datasheet PDF File HFU2N60S PDF File

HFU2N60S
HFU2N60S

Overview
HFD2N60S_HFU2N60S March 2014 HFD2N60S / HFU2N60S 600V N-Channel MOSFET BVDSS = 600 V RDS(on) typ ȍ ID = 1.
9 A FEATURES ƒ Originative New Design ƒ Superior Avalanche Rugged Technology ƒ Robust Gate Oxide Technology ƒ Very Low Intrinsic Capacitances ƒ Excellent Switching Characteristics ƒ Unrivalled Gate Charge : 6.
0 nC (Typ.
) ƒ Extended Safe Operating Area ƒ Lower RDS(ON) ȍ 7\S #9GS=10V ƒ 100% Avalanche Tested D-PAK I-PAK 2 1 3 HFD2N60S 1 2 3 HFU2N60S 1.
Gate 2.
Drain 3.
Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25ഒ) – Continuous (TC = 100ഒ͚͑ – Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) 600 1.
9 1.
14 7.
6 ρ30 120 1.
9 4.
4 4.
5 PD TJ, TSTG TL Power Dissipation (TA = 25ఁ) * Power Dissipation (TC = 25ഒ͚͑ ͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑- Derate above 25ഒ Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds 2.
5 44 0.
35 -55 to +150 300 Units 9 $ $ $ 9 P- $ P- 9QV : : :ഒ ഒ ഒ Thermal Resistance Characteristics Symbol RșJC RșJA RșJA Junction-to-Case Parameter Junction-to-Ambient* Junction-to-Ambient * When mounted on the minimum pad size recommended (PCB Mount) Typ.
---- Max.
2.
87 50 110 Units ഒ: క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͑͢͝;ΒΣΔΙ͑͑ͣͥ͑͢͡ HFD2N60S_HFU2N60S Electrical Characteristics TC=25 qC unless otherwise specified Symbol Parameter Test Conditions Min On Characteristics VGS RDS(ON) Gate Threshold Voltage Static Drain-Source On-Resistance VDS = VGS, ID = 250 ᒺ VGS = 10 V, ID = 0.
95 A͑ 2.
0 -- Off Characteristics BVDSS ԩBVDSS /ԩTJ IDSS IGSSF IGSSR Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current ...


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