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HFP630

Part Number	HFP630
Manufacturer	SemiHow
Description	200V N-Channel MOSFET
Published	Jun 7, 2015
Detailed Description	HFP630 July 2005 HFP630 200V N-Channel MOSFET BVDSS = 200 V RDS(on) typ = 0.34 ȍ ID = 9 A FEATURES Originative New...
Datasheet	HFP630 PDF File

Overview

HFP630 July 2005 HFP630 200V N-Channel MOSFET BVDSS = 200 V RDS(on) typ = 0.
34 ȍ ID = 9 A FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 22 nC (Typ.
) Extended Safe Operating Area Lower RDS(ON) : 0.
34 ȍ (Typ.
) @VGS=10V 100% Avalanche Tested TO-220 1 23 1.
Gate 2.
Drain 3.
Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25ఁ͚ – Continuous (TC = 100ఁ͚ – Pulsed (Note 1...

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