DatasheetsPDF.com

HFP640

Part Number	HFP640
Manufacturer	SemiHow
Description	200V N-Channel MOSFET
Published	Jun 7, 2015
Detailed Description	HFP640 July 2005 HFP640 200V N-Channel MOSFET BVDSS = 200 V RDS(on) typ = 0.145ȍ ID = 18 A FEATURES Originative Ne...
Datasheet	HFP640 PDF File

Overview

HFP640 July 2005 HFP640 200V N-Channel MOSFET BVDSS = 200 V RDS(on) typ = 0.
145ȍ ID = 18 A FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 37 nC (Typ.
) Extended Safe Operating Area Lower RDS(ON) : 0.
145 ȍ (Typ.
) @VGS=10V 100% Avalanche Tested TO-220 1 23 1.
Gate 2.
Drain 3.
Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25ఁ͚ – Continuous (TC = 100ఁ͚ – Pulsed (Note...

Similar Datasheet

HFP60N06 N-Channel Enhancement Mode Field Effect Transistor - HUASHAN ELECTRONIC
HFP630 N-Channel Enhancement Mode Field Effect Transistor - Shantou Huashan
HFP630 200V N-Channel MOSFET - SemiHow
HFP630A 200V N-Channel MOSFET - SemiHow
HFP634 250V N-Channel MOSFET - SemiHow
HFP640 200V N-Channel MOSFET - SemiHow
HFP640 N-Channel Enhancement Mode Field Effect Transistor - Shantou Huashan
HFP640A N-Channel MOSFET - SemiHow
HFP640G N-Channel MOSFET - SemiHow
HFP644 250V N-Channel MOSFET - SemiHow

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)