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IXTF1N400

IXYS
Part Number IXTF1N400
Manufacturer IXYS
Description High Voltage Power MOSFET
Published Jun 5, 2015
Detailed Description High Voltage Power MOSFET (Electrically Isolated Tab) N-Channel Enhancement Mode IXTF1N400 Symbol VDSS VDGR VGSS VGSM ...
Datasheet PDF File IXTF1N400 PDF File

IXTF1N400
IXTF1N400

Overview
High Voltage Power MOSFET (Electrically Isolated Tab) N-Channel Enhancement Mode IXTF1N400 Symbol VDSS VDGR VGSS VGSM ID25 IDM PD TJ TJM Tstg TL TSOLD FC VISOL Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C 1.
6mm (0.
062 in.
) from Case for 10s Plastic Body for 10s Mounting Force 50/60Hz, 1 Minute Maximum Ratings 4000 4000 V V ±20 V ±30 V 1A 3A 160 W - 55 .
.
.
+150 150 - 55 .
.
.
+150 °C °C °C 300 °C 260 °C 20.
.
120 / 4.
5.
.
27 N/lb.
4000 V~ 5g Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) VGS(th) VDS = VGS, ID = 250μA IGSS VGS = ±20V, VDS = 0V IDSS VDS = 3.
...


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