DatasheetsPDF.com

B1016A

Toshiba
Part Number B1016A
Manufacturer Toshiba
Description 2SB1016A
Published May 31, 2015
Detailed Description TOSHIBA Transistor Silicon PNP Epitaxial Type 2SB1016A Power Amplifier Applications 2SB1016A Unit: mm • High breakdown...
Datasheet PDF File B1016A PDF File

B1016A
B1016A

Overview
TOSHIBA Transistor Silicon PNP Epitaxial Type 2SB1016A Power Amplifier Applications 2SB1016A Unit: mm • High breakdown voltage: VCEO = −100 V • Low collector-emitter saturation voltage: VCE (sat) = −2.
0 V (max) • Complementary to 2SD1407A Absolute Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO −100 V Collector-emitter voltage VCEO −100 V Emitter-base voltage VEBO −5 V Collector current IC −5 A Base current IB −0.
5 A Collector power dissipation (Tc = 25°C) PC 30 W JEDEC ― Junction temperature Storage temperature range Tj 150 °C Tstg −55 to 150 °C JEITA TOSHIBA ― 2-10R1A Note: Using continuously under heavy loads (e.
...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)