2SK1062 - Toshiba
Description
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
2SK1062
High Speed Switching Applications Analog Switching Applications Interface Applications
2SK1062
Unit: mm
• Excellent switching time: ton = 14 ns (typ.
) • High forward transfer admittance: |Yfs| = 100 ms (min)
@ID = 50 mA • Low on resistance: RDS (ON) = 0.
6 Ω (typ.
) @ ID = 50 mA • Enhancement-mode
• Complementary to 2SJ168
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Gate-source voltage
Drain current
DC Pulse
Drain power dissipation (Ta = 25°C)
Channel temperature
Storage temperature range
VDS VGSS
ID IDP PD Tch Tstg
60 ±20 200 800 200 150 −55~150
V V
mA
mW °C °C
JEDEC
―
JEITA
SC-59
TOSHIBA
2-3F1F
Weight: 0.
012 g (typ.
)
Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
Marking
1 2007-11-01
Electrical Characteristics (Ta = 25°C)
Characteristics
Gate leakage current Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Forward transfer admittance Drain-source ON resistance Drain-source ON voltage Input capacitance Reverse transfer capacitance Output capacitance
Rise time
Symbol
Test Condition
IGSS IDSS V (BR) DSS Vth ⎪Yfs⎪ RDS (ON) VDS (ON) Ciss Crss Coss
VGS = ±10 V, VDS = 0 VDS = 60 V, VGS = 0 ID = 1 mA, VGS = 0 VDS = 10 V, ID = 1 mA VDS = 10 V, ID = 50 mA ID = 50 mA, VGS = 10 V ID = 50 mA, VGS = 10 V VDS = 10 V, VGS = 0, f = 1 MHz VDS = 10 V, VGS = 0, f = 1 MHz ...
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