2SK1427 - Sanyo
Description
Ordering number:EN3565
Features
· Low ON-state resistance.
· Ultrahigh-speed switching.
· Converters.
N-Channel Silicon MOSFET
2SK1427
Ultrahigh-Speed Switching Applications
Package Dimensions
unit:mm
2052C
[2SK1427]
10.
2 3.
6 5.
1
4.
5 1.
3
2.
7 6.
3
15.
1
18.
0 5.
6
1.
2
0.
8 123
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse)
Symbol
VDSS VGSS
ID IDP
Allowable Power Dissipation
PD
Channel Temperature Storage Temperature
Tch Tstg
2.
55
Conditions
PW≤10µs, duty cycle≤1% Tc=25°C
Electrical Characteristics at Ta = 25˚C
2.
55
Parameter
Symbol
Conditions
Drain-to-Source Breakdown Voltage
V(BR)DSS ID=1mA, VGS=0
Zero-Gate Voltage Drain Current
IDSS VDS=100V, VGS=0
Gate-to-Source Leakage Current
IGSS VGS=±20V, VDS=0
Cutoff Voltage
VGS(off) VDS=10V, ID=1mA
Forward Transfer Admittance
| yfs | VDS=10V, ID=6A
Static Drain-to-Source ON-State Resistance
RDS(on) ID=6A, VGS=10V
(Note) Be careful in handling the 2SK1427 because it has no protection diode between gate and source.
2.
7 14.
0
1 : Gate
0.
4
2 : Drain
3 : Source
EIAJ : SC-46
SANYO : TO-220AB
Ratings 100 ±20 10 40 40 1.
75 150
–55 to +150
Unit V V A A W W ˚C ˚C
Ratings min typ max
Unit
100 V
100 µA
±100 nA
1.
5 2.
5 V
5.
0 8.
0
S
0.
12 0.
16 Ω
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage.
Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ra...
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