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K1829

Toshiba
Part Number K1829
Manufacturer Toshiba
Description 2SK1829
Published May 29, 2015
Detailed Description TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1829 High Speed Switching Applications Analog Switch Appli...
Datasheet PDF File K1829 PDF File

K1829
K1829

Overview
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1829 High Speed Switching Applications Analog Switch Applications • 2.
5 V gate drive • Low threshold voltage: Vth = 0.
5 to 1.
5 V • High speed • Enhancement-mode • Small package Marking Equivalent Circuit 2SK1829 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Gate-source voltage DC drain current Drain power dissipation Channel temperature Storage temperature range Symbol VDS VGSS ID PD Tch Tstg Rating 20 10 50 100 150 −55 to 150 Unit V V mA mW °C °C JEDEC ― JEITA SC-70 TOSHIBA 2-2E1E Weight: 0.
006 g (typ.
) Note: Using continuously under heavy loads (e.
g.
the application of high t...


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