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IPD60N10S4-12

Infineon
Part Number IPD60N10S4-12
Manufacturer Infineon
Description Power-Transistor
Published May 29, 2015
Detailed Description OptiMOSTM-T2 Power-Transistor Features • N-channel - Normal Level - Enhancement mode • AEC qualified • MSL1 up to 260°C ...
Datasheet PDF File IPD60N10S4-12 PDF File

IPD60N10S4-12
IPD60N10S4-12

Overview
OptiMOSTM-T2 Power-Transistor Features • N-channel - Normal Level - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested IPD60N10S4-12 Product Summary VDS RDS(on),max ID 100 V 12.
2 mW 60 A PG-TO252-3-313 TAB 1 3 Type IPD60N10S4-12 Package Marking PG-TO252-3-313 4N1012 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current I D T C=25°C, V GS=10V T C=100°C, V GS=10V1) Pulsed drain current1) Avalanche energy, single pulse1) Avalanche current, single pulse Gate source voltage Power dissipation Operating and storage temperature ...


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