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IPB180N10S4-02

Infineon
Part Number IPB180N10S4-02
Manufacturer Infineon
Description Power-Transistor
Published May 29, 2015
Detailed Description OptiMOSTM-T2 Power-Transistor Features • N-channel - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C peak reflo...
Datasheet PDF File IPB180N10S4-02 PDF File

IPB180N10S4-02
IPB180N10S4-02

Overview
OptiMOSTM-T2 Power-Transistor Features • N-channel - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • RoHS compliant • 100% Avalanche tested IPB180N10S4-02 Product Summary VDS RDS(on) ID 100 V 2.
5 mW 180 A PG-TO263-7-3 Type IPB180N10S4-02 Package Marking PG-TO263-7-3 4N1002 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID T C=25°C, V GS=10V1) T C=100°C, V GS=10V2) Pulsed drain current2) I D,pulse T C=25°C Avalanche energy, single pulse2) E AS I D=90A Avalanche current, single pulse I AS - Gate source voltage V GS - Power dissipation P tot T C=25°C...


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