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CM3400

CHIMICRON SEMICONDUCTOR
Part Number CM3400
Manufacturer CHIMICRON SEMICONDUCTOR
Description N-Channel Enhancement Mode Power MOSFET
Published May 22, 2015
Detailed Description CM3400 N-Channel Enhancement Mode Power MOSFET 30VDS/ ±12VGS/5.8A(ID) Part No CM3400 Description The NCE3400 uses ad...
Datasheet PDF File CM3400 PDF File

CM3400
CM3400



Overview
CM3400 N-Channel Enhancement Mode Power MOSFET 30VDS/ ±12VGS/5.
8A(ID) Part No CM3400 Description The NCE3400 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.
5V.
This device is suitable for use as a Battery protection or in other Switching application.
Application ●PWM applications ●Load switch ●Power management Product Summary VDS=30V ID= 5.
8A RDS(ON)< 59mΩ@ VGS=2.
5V RDS(ON)< 45mΩ@ VGS=4.
5V RDS(ON)< 41mΩ@ VGS=10V D S G SOT-23 Package Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Maximum Drain-Source Voltage Gate-Source Voltage VDS 30 VGS ±12 Continuous Current Drain ID 5.
8 Pulsed Drain Current(Note 1) IDM 30 Power Description PD 1.
4 Operating Junction and Storage Temperature Tj, TSTG Range -55°C to 150°.
Units V V A A W ℃ TAIWAN CHIMICRON SEMICONDUCTOR CO.
, LTD Rev.
1.
3 Dec.
2012 www.
chimicron.
com info@chimicron.
com Page 1 of 3 CM3400 N-Channel Enhancement Mode Power MOSFET Electrical Characteristics (TA=25℃unless otherwise noted) Symbol Parameter Off Characteristics BVDSS Drain-Source Breakdown Voltage IDSS Drain-to-Source Leakage Current Test Conditions VGS = 0V, ID=-250μA VDS=-24V,VGS=0V IGSS Gate-Body Leakage Current VGS=±12V,VDS=0V On Characteristics (Note 3) Gate Threshold Voltage Drain-Source On-State Resistance Forward Trans conductance Dynamic Characteristics (Note4) Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics (Note 4) Turn-on Delay Time Turn-on Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Characteristics Diode Forward Current (Note 2) Diode Forward Voltage (Note 3) VSD VGS(th) RDS(O N) gFS Clss Coss Crss td(on) tr td(off) td(off) Qg Qgs Qgd VDS=VGS,ID=250μA VGS=2.
5V, ID=4A VGS=4.
5V, ID=2.
9A VGS=10V, ID=2.
9A VDS=5V,ID=2.
9A VDS=15V,VGS=0V, F=1.
0MHz VDD=15V,ID=2.
9A VGS=10V,RGEN=3Ω VDS=15V,ID=5...



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