Power transistor - Rohm
Description
Transistors
Power transistor (40V, 2A)
2SD1759 / 2SD1861
2SD1759 / 2SD1861
zFeatures 1) Darlington connection for high DC current gain.
2) Built-in 4kΩ resistor between base and emitter.
3) Complements the 2SB1183 / 2SB1239.
zEquivalent circuit
C
B
RBE 4kΩ
C : Collector B : Base E : Emitter
E
zAbsolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
2SD1861 2SD1759
Symbol VCBO VCER VEBO IC
PC
Junction temperature
Tj
Storage temperature
Tstg
∗ Printed circuit board 1.
7mm thick, collector plating 1cm2 or larger.
Limits 40 40 5 2 1∗ 1 10 150
−55 to +150
Unit V
V(RBE=10kΩ) V
A(DC)
W
W(TC=25°C) °C °C
zPackaging specifications and hFE
Type Package
hFE Code Basic ordering unit (pieces)
2SD1759 CPT3
1k to 200k TL
2500
2SD1861 ATV 1k to TV2 2500
zExternal dimensions (Unit : mm)
2SD1759
5.
5 1.
5
2.
3 0.
9 0.
75
0.
5 2.
3 5.
1
6.
5
(3) (2) (1)
2.
3 0.
65
0.
9 C0.
5
1.
0 0.
5
0.
8Min.
1.
5
2.
5
9.
5
ROHM : CPT3 EIAJ : SC-63
(1) Base (2) Collector (3) Emitter
2SD1861
6.
8
2.
5
1.
0 0.
9 14.
5 4.
4
0.
65Max.
0.
5 (1) (2) (3)
2.
54 2.
54
1.
05 0.
45 Taping specifications
ROHM : ATV
(1) Emitter (2) Collector (3) Base
zElectrical characteristics (Ta=25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
2SD1759 2SD1861
Transition frequency
Output capacitance
Symbol BVCBO BVCER BVEBO
ICBO IEBO VCE(sat)
hFE
fT Cob
Min.
40 40 5 − − − 1000 1000 − −
Typ.
− − − − − 0.
8 − −
150 11
Max.
− − − 1 1 1.
5
20000 − − −
Unit V V V µA µA V − −
MHz pF
Conditions IC=50µA IC=1mA , RBE=10kΩ IE=50µA VCB=24V VEB=4V IC/IB=0.
6A/1.
2mA
VCE/IC=3V/0.
5A
VCE=6V , IE= −0.
1A , f=100MHz VCB=10V , IE=0A , f=1MHz
Rev.
A
1/2
Transistors
2SD1759 / 2SD1861
COLLECTOR CURRENT : IC (A)
zElectrical characteristi...
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