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MRF8S18260HR6

Part Number	MRF8S18260HR6
Manufacturer	Freescale Semiconductor
Description	RF Power Field Effect Transistors
Published	Apr 29, 2015
Detailed Description	Freescale Semiconductor Technical Data Document Number: MRF8S18260H Rev. 1, 2/2012 RF Power Field Effect Transistors N...
Datasheet	MRF8S18260HR6 PDF File

Overview

Freescale Semiconductor Technical Data Document Number: MRF8S18260H Rev.
1, 2/2012 RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed for CDMA and multicarrier base station applications with frequencies from 1805 to 1880 MHz.
Can be used in Class AB and Class C for all typical cellular base station modulation formats.
• 1BT6yap0ni0dcwamlidASt,ihnPg=oleu3t--.
=8C4a7rM4riHWerzaW,ttIsn--pCAuDvtgMS.
,iAgIQnPaeMlrPfaoAgrRnmita=und7ce.
e5C: dVliBpDpD@in=g03,.
00C1hV%aonltPnsre,olIDbaQb=ility on CCDF.
Frequency Gps (dB) ηD Output PAR ACPR (%) (dB) (dBc) 1805 MHz 17.
9 31.
6 6.
0 --35.
0 1840 MHz 17.
9 31.
9 6.
0 --36.
0 1880 MHz 17.
9 32.
5 5.
9 --36.
0 • Cap...

Similar Datasheet

MRF8S18260HR6 RF Power Field Effect Transistors - Freescale Semiconductor
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