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MJE13005

Inchange Semiconductor
Part Number MJE13005
Manufacturer Inchange Semiconductor
Description Silicon NPN Power Transistors
Published Apr 29, 2015
Detailed Description isc Silicon NPN Power Transistor DESCRIPTION ·Collector–Emitter Sustaining Voltage : VCEO(SUS) = 400V(Min.) ·Collector ...
Datasheet PDF File MJE13005 PDF File

MJE13005
MJE13005

Overview
isc Silicon NPN Power Transistor DESCRIPTION ·Collector–Emitter Sustaining Voltage : VCEO(SUS) = 400V(Min.
) ·Collector Saturation Voltage : VCE(sat) = 0.
6(Max) @ IC= 2.
0A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in high-voltage, high-speed, power swit- ching in inductive circuit, they are particularly suited for 115 and 220V switchmode applications such as switching regulators,inverters,Motor controls,Solenoid/Relay drivers and deflection circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VCEV Collector-Emitter Voltage 700 VCEO Collector-Emitter Voltage 400 VEBO Emitter-Base Voltage 9 IC Collector Current-Continuous 4 ICM Collector Current-peak 8 Collector Power Dissipation PC Ta=25℃ Collector Power Dissipation TC=25℃ 2 75 Ti Junction Temperature 150 Tstg Storage Temperature Range -65~150 UNIT V V V A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Therm...


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