2SB1238 - Rohm
Description
Medium power transistor(80V, 0.
7A)
2SB1189 / 2SB1238
Features 1) High breakdown voltage, BVCEO=80V, and
high current, IC=0.
7A.
2) Complements the 2SD1767 / 2SD1859.
Absolute maximum ratings (Ta=25C)
Parameter
Symbol
Limits
Collector-base voltage
VCBO
−80
Collector-emitter voltage
VCEO
−80
Emitter-base voltage
VEBO
−5
Collector current
IC −0.
7
Collector power dissipation
2SB1189 2SB1238
PC
0.
5 2 1
Junction temperature
Tj 150
Storage temperature
Tstg −55 to +150
∗1 When mounted on a 40×40×0.
7 mm ceramic board.
∗2 Printed circuit board 1.
7 mm thick, collector plating 1cm2 or larger.
Unit V V V A
W ∗1
∗2
°C °C
Packaging specifications and hFE
Type Package
hFE Marking
Code Basic ordering unit (pieces)
∗Denotes hFE
2SB1189
MPT3
QR
BD∗
T100
1000
2SB1238 ATV QR − TV2 2500
Dimensions (Unit : mm)
2SB1189
4.
0 1.
0 2.
5 0.
5
(1) (2) (3)
3.
0 1.
5 1.
5 0.
4 0.
4 0.
4 0.
5 1.
5 1.
6
4.
5
ROHM : MPT3 EIAJ : SC-62
2SB1238
6.
8
(1) Base (2) Collector (3) Emitter
2.
5
1.
0 0.
9 14.
5 4.
4
0.
65Max.
0.
5 (1) (2) (3)
2.
54 2.
54
1.
05 0.
45 Taping specifications
ROHM : ATV
(1) Emitter (2) Collector (3) Base
Electrical characteristics (Ta=25C)
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance
Symbol BVCBO BVCEO BVEBO
ICBO IEBO VCE(sat) hFE fT Cob
Min.
Typ.
−80 − −80 − −5 −
−− −− − −0.
2 120 − − 100 − 14
Max.
− − −
−0.
5 −0.
5 −0.
4 390
− 20
Unit V V V μA μA V −
MHz pF
Conditions IC=−50μA IC=−2mA IE=−50μA VCB=−50V VEB=−4V IC/IB=−500mA/−50mA VCE/IC=−3V/−0.
1A VCE=−10V, IE=50mA, f=100MHz VCB=−10V, IE=0A, f=1MHz
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rohm.
com ○c 2010 ROHM Co.
, Ltd.
All rights reserved.
1/2
2010.
07 - Rev.
B
2SB1189 / 2SB1238
Electrical characteristics curves
COLLECTOR CURRENT : IC (A)
−1.
0 Ta=25°C
−0.
8
−10mA −9mA
−0.
6
−0.
4
−8−m7AmA −6mA
−5mA −4mA
−3mA
−2mA
−...
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