Silicon NPN Transistor - Panasonic
Description
DSCQ001
Silicon NPN epitaxial planar type
For general amplification Complementary to DSAQ001 DSC3001 in USSMini3 type package
Features
High forward current transfer ratio hFE with excellent linearity Low collector-emitter saturation voltage VCE(sat) Halogen-free / RoHS compliant
(EU RoHS / UL-94 V-0 / MSL: Level 1 compliant)
Marking Symbol: C1
Packaging DSCQ00100L Embossed type (Thermo-compression sealing): 10000 pcs / reel (standard)
Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Operating ambient temperature Storage temperature
VCBO VCEO VEBO
IC ICP PC Tj Topr Tstg
60 50 7 100 200 100 150 –40 to +85 –55 to +150
Unit V V V mA mA mW °C °C °C
1: Base 2: Emitter 3: Collector
Panasonic JEITA Code
Unit: mm
USSMini3-F1-B SC-116B SOT-923
Electrical Characteristics Ta = 25°C±3°C
Parameter
Symbol
Conditions
Min Typ Max
Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open)
VCBO VCEO VEBO
IC = 10 mA, IE = 0 IC = 2 mA, IB = 0 IE = 10 mA, IC = 0
60 50 7
Collector-base cutoff current (Emitter open) ICBO VCB = 20 V, IE = 0
0.
1
Collector-emitter cutoff current (Base open) ICEO VCE = 10 V, IB = 0
100
Forward current transfer ratio
hFE VCE = 10 V, IC = 2 mA
210 460
Collector-emitter saturation voltage
VCE(sat) IC = 100 mA, IB = 10 mA
0.
13 0.
3
Transition frequency
Collector output capacitance (Common base, input open circuited)
fT VCE = 10 V, IC = 2 mA Cob VCB = 10 V, IE = 0, f = 1 MHz
150 1.
5
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Unit V V V mA mA V MHz
pF
Publication date: February 2014
Ver.
DED
1
Collector power dissipation PC (mW)
DSCQ001
DSCQ001_PC-Ta
PC Ta
125
100
75
50
25
0...
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