Power MOSFET - Vishay
Description
www.
vishay.
com
IRFBC30
Vishay Siliconix
Power MOSFET
D TO-220AB
S D G
G
S N-Channel MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg max.
(nC) Qgs (nC) Qgd (nC) Configuration
600
VGS = 10 V
2.
2
31
4.
6
17
Single
FEATURES
• Dynamic dV/dt rating • Repetitive avalanche rated
Available
• Fast switching • Ease of paralleling
Available
• Simple drive requirements
• Material categorization: for definitions of compliance please see www.
vishay.
com/doc?99912
Note
* This datasheet provides information about parts that are
RoHS-compliant and / or parts that are non RoHS-compliant.
For example, parts with lead (Pb) terminations are not RoHS-compliant.
Please see the information / tables in this datasheet for details
DESCRIPTION
Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W.
The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry.
ORDERING INFORMATION
Package Lead (Pb)-free Lead (Pb)-free and halogen-free
TO-220AB IRFBC30PbF IRFBC30PbF-BE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-source voltage Gate-source voltage
Continuous drain current
Pulsed drain current a Linear derating factor
VDS
VGS
VGS at 10 V
TC = 25 °C TC = 100 °C
ID
IDM
Single pulse avalanche energy b Repetitive avalanche current a Repetitive avalanche energy a Maximum power dissipation Peak diode recovery dV/dt c
TC = 25 °C
EAS IAR EAR PD dV/dt
Operating junction and storage temperature range Soldering recommendations (peak temperature) d
For 10 s
TJ, Tstg
Mounting torque
6-32 or M3 screw
Notes
a.
Repetitive rating; pulse width limited by maximum junction temperature (see fig.
11) b.
VDD = 50 V, starting...
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