Power Field Effect Transistor - Motorola
Description
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
™Designer's Data Sheet TMOS E-FET.
™ Power Field Effect Transistor
N–Channel Enhancement–Mode Silicon Gate
This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time.
In addition, this advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes.
This new energy efficient design also offers a drain–to–source diode with a fast recovery time.
Designed for low voltage, high speed switching applications in power supplies, converters, PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
• Robust High Voltage Termination • Avalanche Energy Specified • Source–to–Drain Diode Recovery Time Comparable
to a Discrete Fast Recovery Diode • Diode is Characterized for Use in Bridge Circuits • IDSS and VDS(on) Specified at Elevated Temperature
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D
S
Order this document by MTP8N50E/D
MTP8N50E
TMOS POWER FET 8.
0 AMPERES 500 VOLTS
RDS(on) = 0.
8 OHM
CASE 221A–06, Style 5 TO-220AB
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating
Drain–to–Source Voltage
WDrain–to–Gate Voltage (RGS = 1.
0 M )
Gate–to–Source Voltage – Continuous Gate–to–Source Voltage – Non–repetitive (tp ≤ 10 ms)
Drain Current — Continuous @ TC = 25°C
mDrain Current — Continuous @ TC = 100°C
Drain Current — Single Pulse (tp ≤ 10 s)
Total Power Dissipation @ TC = 25°C Derate above 25°C
Operating and Storage Temperature Range
Single Pulse Drain–to–Source Avalanche Energy – STARTING TJ = 25°C
W(VDD = 25 Vdc, VGS = 10 Vdc, PEAK IL = 8.
0 Apk, L = 16 mH, RG = 25 )
Thermal Resistance – Junction–to–Case – Junction–to–Ambient
Maximum Lead Temperature for Soldering Purposes, 1/8″ from Case for 5 sec.
Symbol
VDSS VDGR VGS VGSM
ID ID IDM PD
TJ, Tstg EAS
Value
500
500
±20 ±40
8.
0 5.
0 32
12...
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