PNP Plastic Medium-Power Silicon Transistors - MCC
Description
MCC TM
Micro Commercial Components
omponents 20736 Marilla Street Chatsworth !"# $
% !"#
Features
• Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designates RoHS Compliant.
See ordering information)
• High DC Current Gain : hFE=2500 (Typ) @ IC=4.
0Adc
• Low Collector-Emitter Saturation Voltage
• Monolithic Construction with Built-in Base-Emitter Shunt Resistors
• TO-220 Compact package • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1
Maximum Ratings
Symbol
Rating
Rating
Unit
VCEO
Collector-Emitter Voltage
TIP105 TIP106 TIP107
60 80 100
V
VCBO
Collector-Base Voltage
TIP105 TIP106
60 80
V
TIP107
100
VEBO IC ICP IB
PD
TJ, TSTG
Emitter-Base Voltage Collector Current-continuous Collector Current-peak Base Current Collector Dissipation @TC=25OC Derate above 25 OC Junction Temperature Storage Temperature
5.
0 8.
0 15 1.
0 80 0.
64 -55 to +150 -55 to +150
V
A
A
A
W W/ OC
OC OC
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol
Parameter
Min Max Units
OFF CHARACTERISTICS
VCEO(SUS)
Collector-Emitter Sustaining Voltage
(IC=30mAdc, IB=0)
TIP105
TIP106
TIP107
ICEO Collector Cut-off Current (VCE=30Vdc, IB=0) (VCE=40Vdc, IB=0) (VCE=50Vdc, IB=0)
ICBO Collector Cut-off Current (VCB=60Vdc, IE=0) (VCB=80Vdc, IE=0) (VCB=100Vdc, IE=0)
IEBO Emitter Cut-off Current (VBE=5.
0Vdc, IC=0)
TIP105 TIP106 TIP107
TIP105 TIP106 TIP107
ON CHARACTERISTICS(1)
60 80 100
-------
-------
---
----- Vdc ---
50 50
uAdc
50
50 50
uAdc
50
8.
0 mAdc
hFE(1)
DC Current Gain
(IC=3.
0Adc, VCE=4.
0Vdc)
(IC=8.
0Adc, VCE=4.
0Vdc)
VCE(sat) Collector-Emitter Saturation Voltage
(IC=3.
0Adc, IB=6.
0mAdc)
(IC=8.
0Adc, IB=80mAdc)
VBE(ON)
Base-Emitter On Voltage
(IC=8.
0Adc,VCE=4.
0Adc)
hfe Small-Signal Current Gain
(IC=3.
0Adc,VCE=4.
0Vdc,f=1.
0MHz)
Cob Output Capacitance
(VCB=10V, IE=0, f=0.
1MHz)
(1) Pulse Test: Pulse Width<300us, Duty Cycle<2%
1000 200
-----
---
4.
0
---
...
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