Power management - ROHM
Description
Power management (dual transistors)
VT6X12
zStructure NPN silicon epitaxial planar transistor
zFeatures 1) Very small package with two transistors.
2) Suitable for current mirror circuits.
zApplications Current mirror circuits
zPackaging specifications
Package
Code
Type
Basic ordering unit (pieces)
VT6X12
Taping T2R
8000
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol Limits
Collector-base voltage
VCBO
50
Collector-emitter voltage
VCEO
50
Emitter-base voltage
VEBO
5
Collector current
IC ICP ∗1
100 200
Power dissipation
Total
PD ∗2
Element
150 120
Junction temperature
Tj
Range of storage temperature Tstg
∗1 Pw=1mS Single pulse ∗2 Each terminal mounted on a recommended land
150 −55 to +150
Unit V V V mA mA
mW mW °C °C
zDimensions (Unit : mm)
VMT6
1.
2 ± 0.
1 (6) (5) (4)
0.
5 ± 0.
1
0.
2 ± 0.
1
1.
2 ± 0.
1 0.
14 0.
92 ± 0.
1 0.
14
0 ~ 0.
05
0.
2 ± 0.
1
(1) (2) (3) 0.
16 ± 0.
05
0.
4 0.
4
0.
13 ± 0.
05
0.
8 ± 0.
1
Abbreviated symbol : X12 Each lead has same dimensions.
UNIT : mm
zInner circuit
(6) (5) (4)
Tr1 (1) (2)
Tr2 (3)
(1) Base (2) Emitter (3) Emitter (4) Collector (5) Collector (5) Base (6) Collector (6) Base
(Tr1) (Tr1) (Tr2) (Tr2) (Tr1) (Tr2) (Tr1) (Tr2)
zElectrical characteristics (Ta=25°C)
Parameter Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Collector-emitter saturation voltage DC current gain DC current gain ratio Transition frequency Output capacitance
Symbol Min.
BVCEO
50
BVCBO
50
BVEBO
5
ICBO
−
IEBO
−
VCE(sat) hFE
− 120
hFE (Tr1) / hFE (Tr2) 0.
9
fT −
Cob −
Typ.
− − − − −
0.
10 − −
350 1.
6
Max.
− − − 0.
1 0.
1
0.
30 560 1.
1
− −
Unit V V V µA µA V − −
MHz pF
Conditions IC=1mA IC=50µA IE=50µA VCB=50V VEB=5V IC=50mA, IB=5mA VCE=6V, IC=1mA VCE=6V, IC=1mA VCE=10V, IE=−10mA, f=100MHz VCB=10V, IE=0A, f=1MHz
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, Ltd.
All rights reserved.
1/2
2009.
10 - Rev.
A
VT6X12
COLLECTOR...
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