Bias Resistor Transistors - LRC
Description
LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistor
PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network
This new digital transistor is designed to replace a single device and its external resistor bias network.
The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base–emitter resistor.
The BRT eliminates these individual components by integrating them into a single device.
The use of a BRT can reduce both system cost and board space.
The device is housed in the SC–89 package which is designed for low power surface mount applications.
• Simplifies Circuit Design • Reduces Board Space • Reduces Component Count
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating
Symbol
Value
Collector-Base Voltage Collector-Emitter Voltage
VCBO VCEO
50 50
Collector Current
IC 100
Unit Vdc Vdc mAdc
DEVICE MARKING AND RESISTOR VALUES
Device
Marking R1 (K) R2 (K)
Shipping
LDTA124EET1
6B
22 22 3000/Tape & Reel
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation, FR–4 Board (Note 1.
) @ TA = 25°C Derate above 25°C
Thermal Resistance, Junction to Ambient (Note 1.
)
Total Device Dissipation, FR–4 Board (Note 2.
) @ TA = 25°C Derate above 25°C
Thermal Resistance, Junction to Ambient (Note 2.
)
Junction and Storage Temperature Range
1.
FR–4 @ Minimum Pad 2.
FR–4 @ 1.
0 × 1.
0 Inch Pad
LDTA124EET1
3 1
2 SC-89
1 BASE
R1 R2
3 COLLECTOR
2 EMITTER
Symbol PD
RθJA PD
RθJA TJ, Tstg
Max 200
1.
6 600
300 2.
4 400 –55 to +150
Unit
mW mW/°C °C/W
mW mW/°C °C/W
°C
P3–1/4
LESHAN RADIO COMPANY, LTD.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Collector–Base Cutoff Current (VCB = 50 V, IE = 0) Collector–Emitter Cutoff Current (VCE = 50 V, IB = 0) Emitter–Base Cutoff Curren (VEB = 6.
0 V, IC = 0 ) Collector–Base Breakdown Voltage (IC = 10 µA, IE = 0) Collector–Emitter Breakdown Voltage (IC = 2.
0 mA, IB = 0)
DC C...
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