Digital transistors - LRC
Description
LESHAN RADIO COMPANY, LTD.
Digital transistors (built-in resistors)
FEATURES: 1) Built-in bias resistors enable the configuration of an
inverter circuit without connecting external input resistors (see equivalent circuit).
2) The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input.
They also have the advantage of almost completely eliminating parasitic effects.
3) Only the on/off conditions need to be set for operation, making device design easy.
STRUCTURE: PNP digital transistor (Built-in resistor type)
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating
Symbol
Value
Collector-Base Voltage Collector-Emitter Voltage Collector Current
VCBO VCEO
IC
50 50 100
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation, FR–4 Board (Note 1.
) @ TA = 25°C Derate above 25°C
Thermal Resistance, Junction to Ambient (Note 1.
)
Total Device Dissipation, FR–4 Board (Note 2.
) @ TA = 25°C Derate above 25°C
Thermal Resistance, Junction to Ambient (Note 2.
)
Junction and Storage Temperature Range
1.
FR–4 @ Minimum Pad 2.
FR–4 @ 1.
0 × 1.
0 Inch Pad
DEVICE MARKING
LDTA123JET1=6M
Unit Vdc Vdc mAdc
LDTA123JET1
3
1 2
SC-89
PIN 1 BASE (INPUT)
R1 R2
PIN 3 COLLECTOR
(OUTPUT)
PIN 2 EMITTER (GROUND)
Symbol PD
RθJA PD
RθJA TJ, Tstg
Max
200 1.
6 600
300 2.
4 400 –55 to +150
Unit
mW mW/°C °C/W
mW mW/°C °C/W
°C
LDTA123JET1-1/3
LESHAN RADIO COMPANY, LTD.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector–Base Cutoff Current (VCB = 50 V, IE = 0) Collector–Emitter Cutoff Current (VCE = 50 V, IB = 0)
ICBO ICEO
Emitter–Base Cutoff Curren (VEB = 6.
0 V, IC = 0)
IEBO
Collector–Base Breakdown Voltage (IC = 10 µA, IE = 0)
V(BR)CBO
Collector–Emitter Breakdown Voltage (Note 3.
) (IC = 2.
0 mA, IB = 0)
V(BR)CEO
ON CHARACTERISTICS (Note 3.
)
DC Current Gain (VCE = 10 V, IC = 5.
0 mA)
hFE
Collector–Emitter Saturation Voltage (IC = 10 mA, IE = 0.
3 mA) VCE(sat...
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