Bias Resistor Transistors - LRC
Description
LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistors
PNP Silicon Surface Mount Transistors With Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single device and its external resistor bias network.
The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor.
The BRT eliminates these individual components by integrating them into a single device.
The use of a BRT can reduce both system cost and board space.
The device is housed in the SC-89 package which is designed for low power surface mount applications.
ƽSimplifies Circuit Design ƽReduces Board Space ƽReduces Component Count ƽThe SC-89 Package can be Soldered using Wave or Reflow.
ƽAvailable in 8 mm, 7inch/3000 Unit Tape & Reel ƽThis is Pb-Free Device.
DEVICE MARKING AND ORDERING INFORMATION
Device
Marking Package
Shipping
LDTA123EET1G
6H
SC-89 (Pb-Free)
3000/Tape&Reel
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Collector-Base Voltage
VCBO
50
Vdc
Collector-Emitter Voltage
VCEO
50
Vdc
Collector Current
IC 100 mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation TA = 25°C
Derate above 25°C
Thermal Resistance – Junction-to-Ambient
PD RθJA
200 (Note 1) 300 (Note 2) 1.
6 (Note 1) 2.
4 (Note 2)
400 (Note 2)
mW mW/°C °C/W
Junction and Storage Temperature Range
TJ, Tstg –55 to +150
°C
1.
FR–4 @ Minimum Pad 2.
FR–4 @ 1.
0 x 1.
0 inch Pad
LDTA123EET1
3
1 2
SC-89
PIN 1 BASE (INPUT)
R1 R2
PIN 3 COLLECTOR (OUTPUT)
PIN 2 EMITTER (GROUND)
MARKING DIAGRAM 3
XX M
12 xx = Specific Device Code M = Date Code
Version 1.
0
LDTA123EET1-1/3
LESHAN RADIO COMPANY, LTD.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector-Base Cutoff Current (VCB = 50 V, IE = 0) Collector-Emitter Cutoff Current (VCE = 50 V, IB ...
Similar Datasheet